Basic Electronics Knowledge--Semiconductors

paopaolong

Basic Electronics Knowledge--Semiconductors [Copy link]

1. Chinese semiconductor device model naming method
　　The semiconductor device model consists of five parts (field effect devices, semiconductor special devices, composite tubes, PIN tubes, laser devices have only the third, fourth and fifth parts). The meanings of the five parts are as follows:
　　Part 1: Use numbers to indicate the number of effective electrodes of semiconductor devices. 2-Diode, 3-Transistor
　　Part 2: Use Chinese phonetic letters to indicate the material and polarity of semiconductor devices. When indicating diodes: AN type germanium material, BP type germanium material, CN type silicon material, DP type silicon material. When indicating transistors: A-PNP type germanium material, B-NPN type germanium material, C-PNP type silicon material, D-NPN type silicon material.
　　Part 3: Use Chinese phonetic letters to indicate the internal type of semiconductor devices. P-ordinary tube, V-microwave tube, W-voltage regulator tube, C-parameter tube, Z-rectifier tube, L-rectifier stack, S-tunnel tube, N-damping tube, U-photoelectric device, K-switching tube, X-low-frequency low-power tube (F<3MHz, Pc<1W), G-high-frequency low-power tube (f>3MHz, Pc<1W), D-low-frequency high-power tube (f<3MHz, Pc>1W), A-high-frequency high-power tube (f>3MHz, Pc>1W), T-semiconductor thyristor (controlled rectifier), Y-body effect device, B-avalanche tube, J-step recovery tube, CS-field effect tube, BT-semiconductor special device, FH-compound tube, PIN-PIN type tube, JG-laser device.
　　Part 4: Use numbers to indicate serial numbers.
　　Part 5: Use Chinese phonetic letters to indicate specification numbers.
　　For example: 3DG18 indicates NPN type silicon material high frequency triode contact. Japanese semiconductor discrete device model naming method.
　　2. Semiconductor discrete devices produced in Japan are composed of five to seven parts. Usually only the first five parts are used, and the meaning of the symbols of each part is as follows:
　　Part 1: Use numbers to indicate the number or type of effective electrodes of the device. 0-Photoelectric (i.e. photosensitive) diode triode and combination tube of the above devices, 1-diode, 2 triode or other devices with two pn junctions, 3-other devices with four effective electrodes or three pn junctions, ┄┄ and so on.
　　Part 2: Japan Electronics Industry Association JEIA registration mark. S- indicates semiconductor discrete devices registered with Japan Electronics Industry Association JEIA.
　　Part 3: Use letters to indicate the polarity and type of materials used in the device. A-PNP high frequency tube, B-PNP low frequency tube, C-NPN high frequency tube, D-NPN low frequency tube, FP control thyristor, GN control thyristor, HN base unijunction transistor, JP channel field effect tube, KN channel field effect tube, M-bidirectional thyristor.
　　Part 4: Use numbers to indicate the serial number registered with the Japan Electronics Industry Association JEIA. Integers with more than two digits-starting from "11", indicating the serial number registered with the Japan Electronics Industry Association JEIA; devices with the same performance from different companies can use the same serial number; the larger the number, the more recent the product.
　　Part 5: Use letters to indicate the improved product mark of the same model. A, B, C, D, E, F indicate that this device is an improved product of the original model product. American semiconductor discrete device model naming method
　　3. The naming method of American transistors or other semiconductor devices is confusing. The naming method of semiconductor discrete devices of the American Electronics Industry Association is as follows:
　　Part 1: Use symbols to indicate the type of device use. JAN-military grade, JANTX-special military grade, JANTXV-super special military grade, JANS-aerospace grade, (none)-non-military products.
　　Part 2: Use numbers to indicate the number of pn junctions. 1-diode, 2=transistor, 3-three pn junction devices, nn pn junction devices.
　　Part 3: Registration mark of the American Electronics Industry Association (EIA). N-The device has been registered with the American Electronics Industry Association (EIA).
　　Part 4: Registration sequence number of the American Electronics Industry Association. Multi-digit numbers-the sequence number of the device registered with the American Electronics Industry Association.
　　Part 5: Use letters to indicate the device classification. A, B, C, D, ┄┄-different grades of the same model device. For example: JAN2N3251A represents PNP silicon high-frequency low-power switch transistor, JAN-military grade, 2-transistor, N-EIA registration mark, 3251-EIA registration sequence number, A-2N3251A grade. 4. International Electronics Federation semiconductor device model naming method
　　. Most European countries such as Germany, France, Italy, the Netherlands, Belgium, and Eastern European countries such as Hungary, Romania, Yugoslavia, and Poland adopt the International Electronics Federation semiconductor discrete device model naming method. This naming method consists of four basic parts, and the symbols and meanings of each part are as follows:
　　Part I: Use letters to indicate the materials used in the device. A-The bandgap width of the device material Eg = 0.6~1.0eV such as germanium, B-The device uses the material Eg = 1.0~1.3eV such as silicon, C-The device uses the material Eg>1.3eV such as gallium arsenide, D-The device uses the material Eg <0.6eV such as indium antimonide, E-The device uses composite materials and materials used in photovoltaic cells.
　　Part II: Use letters to indicate the type and main characteristics of the device. A-detection switch mixer diode, B-variable capacitance diode, C-low frequency low power transistor, D-low frequency high power transistor, E-tunnel diode, F-high frequency low power transistor, G-composite device and other devices, H-magnetic sensitive diode, K-Hall element in open magnetic circuit, L-high frequency high power transistor, M-Hall element in closed magnetic circuit, P-photosensitive device, Q-light emitting device, R-low power thyristor, S-low power switch tube, T-high power thyristor, U-high power switch tube, X-multiplier diode, Y-rectifier diode, Z-voltage regulator diode.
　　Part 3: Use numbers or letters plus numbers to indicate the registration number. Three digits represent the registration number of general semiconductor devices, and one letter plus two digits represent the registration number of special semiconductor devices.
　　Part 4: Use letters to classify devices of the same type. A, B, C, D, E┄┄-a mark indicating that devices of the same model are classified according to a certain parameter.
　　In addition to the four basic parts, suffixes are sometimes added to distinguish characteristics or further classify. Common suffixes are as follows:
　　1. Suffix of the Zener diode model. The first part of the suffix is a letter, indicating the allowable error range of the stable voltage value. The letters A, B, C, D, and E represent the allowable errors of ±1%, ±2%, ±5%, ±10%, and ±15%, respectively; the second part of the suffix is a number, indicating the integer value of the nominal stable voltage; the third part of the suffix is the letter V, which represents the decimal point. The number after the letter V is the decimal value of the nominal stable voltage of the Zener diode.
　　2. The suffix of the rectifier diode is a number, indicating the maximum reverse peak withstand voltage value of the device, in volts.
　　3. The suffix of the thyristor model is also a number, usually marking the smaller voltage value of the maximum reverse peak withstand voltage value and the maximum reverse turn-off voltage.
　　For example: BDX51- represents NPN silicon low-frequency high-power transistor, AF239S- represents PNP germanium high-frequency low-power transistor. 5. European early semiconductor discrete device model naming method
　　Some European countries, such as Germany and the Netherlands, use the following naming method.
　　The first part: O-indicates semiconductor devices.
　　The second part: A-diode, C-transistor, AP-photodiode, CP-phototransistor, AZ-voltage regulator, RP-photoelectric device.
　　The third part: multi-digit numbers-indicate the registration number of the device.
　　The fourth part: A, B, C┄┄-indicates variant products of the same model device.
　　The Russian semiconductor device model nomenclature is not introduced here because it is rarely used.

ys3663391

Good, it would be better if there were pictures

lipchun

Is there anything else I want to review?